PTFC262808FV-V1
RF MOSFET LDMOS 28V H-37275G-6Manufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
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MACOM Technology Solutions PTFC262808FV-V1 is an RF LDMOS power transistor designed for high-power applications. This component operates within the 2.62 GHz to 2.69 GHz frequency range, providing a typical gain of 18 dB. It is rated for a drain-source voltage of 28 V under test conditions and a maximum drain-source voltage of 65 V. The device delivers an output power of 280 W, with a drain current of 10 mA at the test condition. Its advanced LDMOS technology ensures high efficiency and performance in demanding RF power amplifier designs. The PTFC262808FV-V1 is supplied in the H-37275G-6/2 package, commonly utilized in wireless infrastructure, base stations, and high-power RF systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | H-37275G-6/2 |
| Current Rating (Amps) | 1µA |
| Frequency | 2.62GHz ~ 2.69GHz |
| Power - Output | 280W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-37275G-6/2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 10 mA |
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