Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

RF FETs, MOSFETs

PTFB213004F-V2-R0

Banner
productimage

PTFB213004F-V2-R0

RF MOSFET LDMOS 30V H-37275-6

Manufacturer: MACOM Technology Solutions

Categories: RF FETs, MOSFETs

Quality Control: Learn More

MACOM Technology Solutions PTFB213004F-V2-R0 is an LDMOS RF power transistor designed for high-power applications. This device operates at 2.17 GHz, delivering a nominal output power of 60W with a typical gain of 18dB. It is rated for a drain voltage of 65V and tested at 30V, with a continuous drain current of 2.4A. The component is housed in an H-37275-6/2 package, suitable for surface mounting. Its robust design makes it suitable for use in base station infrastructure, point-to-point communication systems, and other demanding RF power amplifier circuits.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Strip
Technical Details:
PackagingStrip
Package / CaseH-37275-6/2
Current Rating (Amps)-
Mounting TypeSurface Mount
Frequency2.17GHz
Power - Output60W
Gain18dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageH-37275-6/2
Voltage - Rated65 V
Voltage - Test30 V
Current - Test2.4 A

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MRF136Y

RF MOSFET 28V 319B-02

product image
PTFB182557SH-V1-R250

RF MOSFET LDMOS

product image
NPT2010

RF MOSFET HEMT 48V