PTFB212503FL-V2-R0
RF MOSFET LDMOS 30V H-34288-4Manufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
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MACOM Technology Solutions PTFB212503FL-V2-R0 is a high-power LDMOS RF power transistor designed for demanding applications. This device operates at 2.17 GHz, delivering a nominal output power of 55W with a typical gain of 18.1dB at a test current of 1.85A and 30V drain voltage. The PTFB212503FL-V2-R0 features a 65V breakdown voltage and is housed in a thermally enhanced H-34288-4/2 package, suitable for surface mounting. Its robust LDMOS technology makes it well-suited for use in base station infrastructure, radar systems, and other high-frequency power amplification applications. The device is supplied in strip packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | 2-Flatpack, Fin Leads, Flanged |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.17GHz |
| Power - Output | 55W |
| Gain | 18.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-34288-4/2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.85 A |
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