PTFB211501E-V1-R0
RF MOSFET LDMOS 30V H-36248-2Manufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
Quality Control: Learn More
MACOM Technology Solutions PTFB211501E-V1-R0 is an RF LDMOS power transistor designed for demanding applications. This surface-mount component operates with a drain voltage of 30V under test conditions, delivering 40W of output power at 2.17GHz with a typical power gain of 18dB. The device is constructed using LDMOS technology, ensuring efficient high-frequency performance. It is supplied in a strip package, specifically the H-36248-2, a 2-flatpack with fin leads for optimized thermal management. This transistor is suitable for use in base station infrastructure, point-to-point radios, and other high-power RF systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.17GHz |
| Power - Output | 40W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36248-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.2 A |
Request a Quote
Clients Also Buy
MRF136Y
RF MOSFET 28V 319B-02
PTFA080551F-V4-R250
RF MOSFET LDMOS 28V H-37265-2
PTFB182557SH-V1-R250
RF MOSFET LDMOS
