MAPG-002729-350L00
RF MOSFET GAN 50VManufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
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MACOM Technology Solutions MAPG-002729-350L00 is a Gallium Nitride (GaN) RF MOSFET designed for high-power applications. This component operates within the 2.7GHz to 2.9GHz frequency range, delivering 400W of output power. It is rated for 55V with a test voltage of 50V and a continuous drain current of 500mA, with a peak current rating of 10A. The device exhibits a gain of 11.5dB, making it suitable for demanding RF power amplification stages. Available in Bulk packaging, this RF MOSFET is a key component in industries such as aerospace, defense, and telecommunications infrastructure where robust and efficient power handling is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | - |
| Current Rating (Amps) | 10A |
| Frequency | 2.7GHz ~ 2.9GHz |
| Configuration | - |
| Power - Output | 400W |
| Gain | 11.5dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | - |
| Voltage - Rated | 55 V |
| Voltage - Test | 50 V |
| Current - Test | 500 mA |
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