GTRB384608FC-V1-R0
RF MOSFET HEMT H-37248KC-6Manufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
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MACOM Technology Solutions GTRB384608FC-V1-R0 is a high-power RF MOSFET designed for demanding applications. Featuring Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology, this component operates across a frequency range of 3.3GHz to 3.8GHz. It delivers a typical gain of 12.3dB and offers a substantial output power capability of 440W at a rated voltage of 48V. The device is housed in an H-37248KC-6/2 package, suitable for surface mount configurations, and is supplied on tape and reel for efficient automated assembly. This RF power transistor is utilized in critical infrastructure such as base stations, radar systems, and electronic warfare platforms where robust performance and high efficiency are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | H-37248KC-6/2 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3.3GHz ~ 3.8GHz |
| Configuration | - |
| Power - Output | 440W |
| Gain | 12.3dB |
| Technology | HEMT |
| Noise Figure | - |
| Supplier Device Package | H-37248KC-6/2 |
| Voltage - Rated | 48 V |
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