GTRA260502M-V1-R3K
50W, GAN HEMT, 48V, 2515-2675MHZManufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
Quality Control: Learn More
MACOM Technology Solutions GaN HEMT GTRA260502M-V1-R3K is a 50W Gallium Nitride High Electron Mobility Transistor operating within the 2.515GHz to 2.675GHz frequency band. This device offers a typical gain of 16.4dB at a test voltage of 48V and a test current of 25mA. Engineered for demanding RF power applications, it is housed in a 6-DFN (6.5x7) package with an exposed pad for enhanced thermal management. The GTRA260502M-V1-R3K is suitable for use in wireless infrastructure, base stations, and radar systems. It is supplied on tape and reel (TR).
Additional Information
Series: GaNRoHS Status: unknownManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Current Rating (Amps) | 5mA |
| Mounting Type | Surface Mount |
| Frequency | 2.515GHz ~ 2.675GHz |
| Configuration | - |
| Power - Output | 50W |
| Gain | 16.4dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 6-DFN (6.5x7) |
| Grade | - |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 25 mA |
| Qualification | - |
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