CGHV59350P
RF MOSFET GAN HEMT 50V 440218Manufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
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MACOM Technology Solutions CGHV59350P is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high-power RF applications. This device operates within the 5.2GHz to 5.9GHz frequency range, delivering a significant output power of 350W. It exhibits a typical gain of 10.7dB and is rated for a drain-source voltage of 50V during testing, with a maximum rated voltage of 150V. The device is specified with a test current of 1A. The CGHV59350P is packaged in a 440218 case, suitable for chassis mounting, and is supplied in trays. This component is utilized in demanding sectors such as telecommunications, radar systems, and electronic warfare.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 440218 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 5.2GHz ~ 5.9GHz |
| Configuration | - |
| Power - Output | 350W |
| Gain | 10.7dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | 440218 |
| Voltage - Rated | 150 V |
| Voltage - Test | 50 V |
| Current - Test | 1 A |
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