PH3135-90S
TRANSISTOR,90W,3.1-3.5GHZ,2US,10Manufacturer: MACOM Technology Solutions
Categories: Bipolar RF Transistors
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MACOM Technology Solutions PH3135-90S is a high-power NPN RF transistor designed for demanding applications. This chassis-mount component operates within the 3.1-3.5 GHz frequency range, delivering 90W of output power with a typical gain of 7.5dB. It features a robust 65V collector-emitter breakdown voltage and a maximum collector current of 10.7A. The device is rated for continuous operation at 200°C junction temperature, ensuring reliability in harsh environments. Its 580W power dissipation capability and 2L-FLG package make it suitable for use in high-power RF amplification stages within radar systems, electronic warfare platforms, and other advanced communication infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 2L-FLG |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7.5dB |
| Power - Max | 580W |
| Current - Collector (Ic) (Max) | 10.7A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | - |
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