PH3135-65M
RF TRANS NPN 65VManufacturer: MACOM Technology Solutions
Categories: Bipolar RF Transistors
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MACOM Technology Solutions PH3135-65M is an NPN bipolar RF transistor designed for high-power applications. This component operates with a collector-emitter breakdown voltage of 65V and can handle a maximum collector current of 7.7A, delivering up to 65W of power. The transistor exhibits a typical gain range of 8.23dB to 9.09dB. It is rated for operation at elevated temperatures, with a junction temperature (TJ) of up to 200°C. Commonly utilized in base station infrastructure and high-power RF amplification systems, this device is supplied in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | - |
| Mounting Type | - |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.23dB ~ 9.09dB |
| Power - Max | 65W |
| Current - Collector (Ic) (Max) | 7.7A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | - |
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