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PH3135-5S

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PH3135-5S

RF TRANS NPN 60V

Manufacturer: MACOM Technology Solutions

Categories: Bipolar RF Transistors

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MACOM Technology Solutions PH3135-5S is an NPN RF transistor designed for high-performance applications. This component operates at a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 750mA. Delivering a power output of 5W with a typical gain of 8.5dB, it is suitable for demanding RF power amplification stages. The device is specified for operation at an extended junction temperature of 200°C, ensuring reliability in challenging thermal environments. It is supplied in tray packaging. This transistor finds application in various RF power systems, including but not limited to, base station infrastructure and defense electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tray
Technical Details:
PackagingTray
Package / Case-
Mounting Type-
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain8.5dB
Power - Max5W
Current - Collector (Ic) (Max)750mA
Voltage - Collector Emitter Breakdown (Max)60V
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Supplier Device Package-

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