Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

PH3135-5M

Banner
productimage

PH3135-5M

TRANSISTOR,BIPOLAR,5W,3.10-3.50_

Manufacturer: MACOM Technology Solutions

Categories: Bipolar RF Transistors

Quality Control: Learn More

MACOM Technology Solutions PH3135-5M is an NPN bipolar RF transistor designed for demanding high-power applications. This chassis mount component delivers 50W of output power with a 60V collector-emitter breakdown voltage and a collector current of up to 700mA. Featuring a transition frequency of 3.5GHz and a typical gain of 8.5dB, the PH3135-5M is engineered for robust performance in challenging thermal environments, operating at temperatures up to 200°C. Its 2L-FLG package facilitates effective heat dissipation. This device is suitable for use in wireless infrastructure and other high-frequency power amplification systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case2L-FLG
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C
Gain8.5dB
Power - Max50W
Current - Collector (Ic) (Max)700mA
Voltage - Collector Emitter Breakdown (Max)60V
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition3.5GHz
Noise Figure (dB Typ @ f)-
Supplier Device Package-

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MAPR-001011-850S00

TRANSISTOR,850W,1025-1150MHZ,50V

product image
MRF316

TRANS RF NPN 35V 9A 316-01

product image
MRF455MP

TRANSISTOR,<30MHZ,12.5V,60W,MATC