PH2729-65M
TRANSISTOR,BIPOLAR,65W,36V,2.70-Manufacturer: MACOM Technology Solutions
Categories: Bipolar RF Transistors
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MACOM Technology Solutions PH2729-65M is an NPN bipolar RF transistor designed for high-power applications. This component operates within the 2.7GHz to 2.9GHz frequency range, delivering a typical gain of 8.5dB. It features a robust 65V collector-emitter breakdown voltage and can handle a collector current of up to 8A. The transistor offers a maximum power output of 330W, making it suitable for demanding RF power amplification in sectors such as telecommunications, radar systems, and industrial heating. The PH2729-65M is presented in a 2L-FLG chassis mount package for efficient thermal management, and it is supplied in bulk packaging. Its high operating junction temperature capability of 200°C (TJ) ensures reliable performance in challenging environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 2L-FLG |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.5dB |
| Power - Max | 330W |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 2.7GHz ~ 2.9GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 2L-FLG |
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