PH1214-110M
TRANSISTOR,110W,1.20-1.40GHZ,40VManufacturer: MACOM Technology Solutions
Categories: Bipolar RF Transistors
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MACOM Technology Solutions PH1214-110M is a high-power NPN RF transistor designed for demanding applications. This chassis mount device operates within the 1.20-1.40 GHz frequency range, delivering 110W of output power with a typical gain of 7.4dB. It features a 70V collector-emitter breakdown voltage and can handle up to 10.5A collector current, with a maximum power dissipation of 350W. The 2L-FLG package ensures robust thermal management for operation up to a junction temperature of 200°C. This component is suitable for use in radar systems, electronic warfare, and other high-frequency power amplification circuits across aerospace, defense, and telecommunications industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 2L-FLG |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7.4dB |
| Power - Max | 350W |
| Current - Collector (Ic) (Max) | 10.5A |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 2L-FLG |
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