MRF321
RF TRANS NPN 33V 244-04Manufacturer: MACOM Technology Solutions
Categories: Bipolar RF Transistors
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MACOM Technology Solutions MRF321 is an NPN bipolar RF transistor designed for high-power applications. This component offers a collector-emitter breakdown voltage of 33V and a maximum collector current of 1.1A. With a power dissipation rating of 10W and a typical gain of 13dB, the MRF321 is suitable for demanding RF power amplification stages. Its chassis mount design and 244-04 package facilitate robust thermal management and integration into power systems. The transistor exhibits a minimum DC current gain of 20 at 500mA and 5V. This device finds application in industrial, defense, and commercial wireless infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 244-04 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 13dB |
| Power - Max | 10W |
| Current - Collector (Ic) (Max) | 1.1A |
| Voltage - Collector Emitter Breakdown (Max) | 33V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 244-04, STYLE 1 |
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