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MAPRST0912-50

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MAPRST0912-50

RF TRANS NPN 65V

Manufacturer: MACOM Technology Solutions

Categories: Bipolar RF Transistors

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MACOM Technology Solutions MAPRST0912-50 is an NPN RF transistor designed for high-power applications. This component offers a collector-emitter breakdown voltage of 65V and can handle a continuous collector current of 5.3A, delivering up to 50W of power output. With a typical gain range between 10.16dB and 10.25dB, it is suitable for demanding RF power amplifier designs. The chassis mount configuration ensures efficient thermal management, critical for sustained operation at its maximum junction temperature of 200°C. This device finds application in various high-frequency power systems, including industrial heating and RF power generation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case-
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain10.16dB ~ 10.25dB
Power - Max50W
Current - Collector (Ic) (Max)5.3A
Voltage - Collector Emitter Breakdown (Max)65V
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Supplier Device Package-

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