MAPRST0912-350
RF TRANS NPN 65V 1.215GHZManufacturer: MACOM Technology Solutions
Categories: Bipolar RF Transistors
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MACOM Technology Solutions MAPRST0912-350 is an NPN RF power transistor designed for high-power applications. With a collector-emitter breakdown voltage of 65V and a maximum collector current of 32.5A, this component delivers up to 350W of power output. It operates at a frequency of 1.215GHz, offering a typical gain of 9.4dB. The transistor features a chassis mount package for efficient thermal management, crucial for demanding operating environments. Its high junction temperature rating of 200°C further enhances reliability in harsh conditions. This RF transistor is suitable for use in base station infrastructure, radar systems, and other high-power RF amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | - |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9.4dB |
| Power - Max | 350W |
| Current - Collector (Ic) (Max) | 32.5A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | - |
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