NGD8209NT4G
IGBT 445V 12A TO252Manufacturer: Littelfuse Inc.
Categories: Single IGBTs
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Littelfuse Inc. NGD8209NT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 445 V and a continuous collector current rating of 12 A, with a pulsed collector current capability of up to 30 A. The NGD8209NT4G offers a maximum power dissipation of 94 W and an on-state voltage (Vce(on)) of 2.3V at a gate-emitter voltage of 4.5V and collector current of 10A. Its logic input type ensures efficient gate drive. Packaged in a TO-252 (DPAK) surface-mount configuration, it is supplied on tape and reel. The operating temperature range is from -55°C to 175°C. This IGBT is suitable for use in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4.5V, 10A |
| Supplier Device Package | TO-252 (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 445 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 94 W |
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