NGD8201BNT4G
IGBT 430V 15A TO252Manufacturer: Littelfuse Inc.
Categories: Single IGBTs
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Littelfuse Inc. NGD8201BNT4G is a 430V, 15A Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications. This component features a maximum continuous collector current of 15A and a pulsed collector current (Icm) of 50A. With a collector-emitter breakdown voltage of 430V and a maximum power dissipation of 115W, it is suitable for demanding power switching applications. The IGBT type utilizes logic input and has a Vce(on) of 1.8V at 4.5V gate-emitter voltage and 10A collector current. Packaged in a TO-252 (DPAK) surface mount configuration, the NGD8201BNT4G operates across a wide temperature range of -55°C to 175°C. This device finds utility in various industrial power control systems, including motor drives and power supplies. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 4.5V, 10A |
| Supplier Device Package | TO-252 (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/4µs |
| Switching Energy | - |
| Test Condition | 300V, 6.5A, 1kOhm |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 430 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 115 W |
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