NGD18N45CLBT4G
IGBT 500V 18A TO252Manufacturer: Littelfuse Inc.
Categories: Single IGBTs
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Littelfuse Inc. NGD18N45CLBT4G is a 500V, 18A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a surface-mount TO-252 (DPAK) package, enabling compact board designs. It offers a continuous collector current of 18A and a pulsed collector current of 50A, with a maximum power dissipation of 115W. The input type is logic, and it operates within a temperature range of -55°C to 175°C. Typical switching characteristics include a turn-on delay of 420ns and a turn-off delay of 2.9µs under test conditions of 300V and 1kOhm. The on-state voltage (Vce(on)) is a maximum of 2.3V at 4.5V gate-emitter voltage and 7A collector current. This device is suitable for use in industrial automation, power supplies, and motor control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4.5V, 7A |
| Supplier Device Package | TO-252 (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 420ns/2.9µs |
| Switching Energy | - |
| Test Condition | 300V, 1kOhm, 5V |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 115 W |
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