LSIC1MO170E1000
SICFET N-CH 1700V 5A TO247-3LManufacturer: Littelfuse Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Littelfuse Inc. LSIC1MO170E1000 is an N-Channel SiCFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 5 A at 25°C, with a maximum power dissipation of 54 W (Tc). The device offers a low on-resistance (Rds On) of 1 Ohm at 2 A and 20 V, with a typical gate charge (Qg) of 15 nC at 20 V and input capacitance (Ciss) of 200 pF at 1000 V. It operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-247AD package for through-hole mounting. This SiCFET is suitable for use in power conversion systems within the electric vehicle, industrial power supplies, and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 1000 V |
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