LSIC1MO170E0750
SICFET N-CH 1700V 750OHM TO247-3Manufacturer: Littelfuse Inc.
Categories: Single FETs, MOSFETs
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Littelfuse Inc. LSIC1MO170E0750 is a Silicon Carbide (SiC) N-Channel FET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 6.2 A at 25°C (Tc). The Rds On is specified at a maximum of 1 Ohm at 2 A and 20 V, with a drive voltage range of up to 20V. Key parameters include input capacitance (Ciss) of 200 pF at 1000 V and gate charge (Qg) of 13 nC at 20 V. The device offers a maximum power dissipation of 60 W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). The LSIC1MO170E0750 is packaged in a TO-247-3 (TO-247AD) through-hole configuration. This SiCFET is suitable for use in power conversion, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 1000 V |
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