LSIC1MO120G0040
MOSFET SIC 1200V 50A TO247-4LManufacturer: Littelfuse Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Littelfuse Inc. LSIC1MO120G0040 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding power applications. This component offers a robust 1200 V breakdown voltage and a continuous drain current capability of 70 A at 25°C, with a maximum power dissipation of 357 W at the same temperature. The LSIC1MO120G0040 features a low on-resistance of 50 mOhm at 40 A and 20 V gate drive, supported by a gate charge (Qg) of 175 nC at 20 V. Its input capacitance (Ciss) is specified at 317 pF at 800 V. Operating within an extended temperature range of -55°C to 175°C, this device utilizes a TO-247-4L through-hole package for efficient thermal management. The LSIC1MO120G0040 is suitable for use in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 317 pF @ 800 V |
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