LSIC1MO120G0025
MOSFET SIC 1200V 70A TO247-4LManufacturer: Littelfuse Inc.
Categories: Single FETs, MOSFETs
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Littelfuse Inc. LSIC1MO120G0025 is an N-Channel Silicon Carbide (SiC) MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 100 A at 25°C, with a maximum power dissipation of 500 W (Tc). The Rds(on) is specified at 32 mOhm maximum at 50 A and 20 V gate drive. Key parameters include a gate charge (Qg) of 265 nC (max) at 20 V and input capacitance (Ciss) of 495 pF (max) at 800 V. The device operates within an extended temperature range of -55°C to 175°C (TJ). Packaged in a TO-247-4L through-hole configuration, this SiCFET is suitable for demanding power conversion and management systems across industries such as electric vehicles, industrial power supplies, and renewable energy. Gate voltage limits are +22V and -6V, with a threshold voltage (Vgs(th)) of 4V at 30mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 50A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 30mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 265 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 495 pF @ 800 V |
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