LSIC1MO120E0160
SICFET N-CH 1200V 22A TO247-3Manufacturer: Littelfuse Inc.
Categories: Single FETs, MOSFETs
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The Littelfuse Inc. LSIC1MO120E0160 is an N-Channel Silicon Carbide Field Effect Transistor (SiCFET) designed for high-voltage, high-efficiency power applications. This component features a 1200 V drain-source voltage (Vdss) and a continuous drain current capability of 22 A at 25°C (Tc). With a maximum power dissipation of 125 W (Tc), it offers a low on-resistance of 200 mOhm at 10 A and 20 V gate-source voltage.
The LSIC1MO120E0160 utilizes a TO-247-3 package for through-hole mounting, suitable for demanding environments with an operating temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge of 57 nC (Max) at 20 V and input capacitance (Ciss) of 870 pF (Max) at 800 V. The device supports gate-source voltages from -6 V to +22 V. This SiCFET is commonly employed in industrial power supplies, electric vehicle charging, solar inverters, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 800 V |
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