LSIC1MO120E0120
SICFET N-CH 1200V 27A TO247-3Manufacturer: Littelfuse Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Littelfuse Inc. SiCFET N-Channel LSIC1MO120E0120 offers 1200V drain-to-source voltage with a continuous drain current of 27A at 25°C. This device features a low on-resistance of 150mOhm maximum at 14A and 20V, and a gate charge of 80nC maximum at 20V. Input capacitance (Ciss) is specified at 1125pF maximum at 800V. The power dissipation is rated at 139W at 25°C, and it operates within a temperature range of -55°C to 150°C. Mounting is via through-hole, with the component housed in a TO-247-3 package. This SiCFET is suitable for applications in power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 14A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 7mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1125 pF @ 800 V |
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