LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3Manufacturer: Littelfuse Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Littelfuse Inc. SiCFET N-Channel LSIC1MO120E0080. This device features a 1200 V drain-source breakdown voltage and a continuous drain current of 39 A at 25°C (Tc). The static drain-source on-resistance (Rds(on)) is a maximum of 100 mOhm at 20 A and 20 V gate drive. With 179 W maximum power dissipation (Tc) and a TO-247-3 package, this through-hole component is suitable for high-power applications. Key electrical parameters include a gate charge (Qg) of 95 nC (max) at 20 V and input capacitance (Ciss) of 1825 pF (max) at 800 V. The operating temperature range is -55°C to 150°C. This component is utilized in power conversion systems and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 179W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1825 pF @ 800 V |
Request a Quote
Clients Also Buy
LSIC1MO120E0160
SICFET N-CH 1200V 22A TO247-3
LSIC1MO170T0750
SICFET N-CH 1700V 6.4A TO263-7L
LSIC1MO120G0040
MOSFET SIC 1200V 50A TO247-4L
