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IXTH05N250P3HV

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IXTH05N250P3HV

MOSFET N-CH 2200V 600MA TO247HV

Manufacturer: Littelfuse Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Littelfuse Inc. IXTH05N250P3HV is an N-Channel Power MOSFET designed for high-voltage applications requiring robust switching performance. This component offers a maximum drain-source voltage (Vds) of 2500 V and a continuous drain current (Id) of 500 mA at 25°C. With a maximum power dissipation of 104 W at 25°C, it is suitable for demanding power conversion circuits. The device features a low on-resistance (Rds On) of 110 Ohms at 250 mA and 10 V gate-source voltage. Key parameters include an input capacitance (Ciss) of 303 pF and a gate charge (Qg) of 10.5 nC, both specified at relevant operating conditions. The TO-247 (IXTH) package with through-hole mounting provides reliable thermal management. This MOSFET is utilized in industries such as renewable energy, industrial power supplies, and electric vehicle charging infrastructure.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Rds On (Max) @ Id, Vgs110Ohm @ 250mA, 10V
FET Feature-
Power Dissipation (Max)104W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)2500 V
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds303 pF @ 25 V
Qualification-

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