IXFN52N90P
MOSFET N-CH 900V 43A SOT227Manufacturer: Littelfuse Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Littelfuse Inc. HiPerFET™, Polar IXFN52N90P is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 43A at 25°C (Tc), with a maximum power dissipation of 890W (Tc). The low on-resistance (Rds On) of 160mOhm is achieved at 26A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 308nC (max) and input capacitance (Ciss) of 19000 pF (max) at 25V. The IXFN52N90P utilizes a SOT-227B (miniBLOC) package for chassis mounting, ensuring efficient thermal management. Operating temperature range is from -55°C to 150°C (TJ). This component is suitable for use in high-voltage power conversion, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 308 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |
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