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LSIC2SD170B50

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LSIC2SD170B50

DIODE SIL CARB 1.7KV 135A TO247

Manufacturer: Littelfuse Inc.

Categories: Single Diodes

Quality Control: Learn More

Littelfuse Inc. LSIC2SD170B50 is a Silicon Carbide Schottky diode designed for high-voltage, high-current applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage (Vr) of 1700 V and an average rectified forward current (Io) of 135 A. The forward voltage drop (Vf) is a maximum of 1.8 V at 50 A. It exhibits a low reverse leakage current of 100 µA at 1700 V and features zero reverse recovery time for high-speed switching. The operating junction temperature range is -55°C to 175°C. This device is suitable for power conversion systems in industrial power supplies, electric vehicle charging, and renewable energy applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F3900pF @ 1V, 1MHz
Current - Average Rectified (Io)135A
Supplier Device PackageTO-247-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1700 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 50 A
Current - Reverse Leakage @ Vr100 µA @ 1700 V

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