LSIC2SD120D20A
SIC SCHOTTKY DIODE 1200V 20A TO2Manufacturer: Littelfuse Inc.
Categories: Single Diodes
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Littelfuse Inc. Gen2 series SiC Schottky Diode, part number LSIC2SD120D20A, offers a 1200 V reverse voltage and a 20 A forward current capability. This surface mount device, housed in a TO-263-2L package, features a low forward voltage of 1.8 V at 20 A and a minimal reverse leakage of 100 µA at 1200 V. Its advanced Silicon Carbide technology enables zero reverse recovery time for currents exceeding 500 mA, contributing to high-efficiency power conversion. The diode is qualified to AEC-Q101 standards and operates across a junction temperature range of -55°C to 175°C. Applications include automotive power systems and high-voltage power supplies.
Additional Information
Series: Gen2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1310pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 55A |
| Supplier Device Package | TO-263-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Qualification | AEC-Q101 |
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