LSIC2SD120C10
DIODE SIL CARB 1.2KV 33A TO252LManufacturer: Littelfuse Inc.
Categories: Single Diodes
Quality Control: Learn More
The Littelfuse Inc. Gen2 series LSIC2SD120C10 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This surface mount component, housed in a TO-252 (DPAK) package, offers a maximum DC reverse voltage of 1200 V and an average rectified forward current of 33 A. Its forward voltage drop is rated at 1.8 V maximum at 10 A. The device exhibits a low reverse leakage current of 100 µA at 1200 V and features a capacitance of 582 pF at 1 V and 1 MHz. Notably, it boasts a 0 ns reverse recovery time, indicating no significant recovery time above 500 mA. Operating over a junction temperature range of -55°C to 175°C, the LSIC2SD120C10 is suitable for power supply, motor drive, and photovoltaic inverter applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: Gen2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 582pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 33A |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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