LSIC2SD120C08
DIODE SIC 1.2KV 24.5A TO252LManufacturer: Littelfuse Inc.
Categories: Single Diodes
Quality Control: Learn More
Littelfuse Inc. LSIC2SD120C08 is a Gen2 Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This surface mount component, housed in a TO-252-3 (DPAK) package, offers a reverse voltage rating of 1200 V and a continuous forward current capability of 24.5 A. Key electrical characteristics include a forward voltage drop of 1.8 V at 8 A and a reverse leakage current of 100 µA at 1200 V. The diode exhibits extremely fast switching speeds with a reverse recovery time of 0 ns, enabling efficient power conversion. Its low junction capacitance of 454 pF at 1V, 1MHz is also noteworthy. Operating across a junction temperature range of -55°C to 175°C, the LSIC2SD120C08 is well-suited for demanding environments in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. This device is supplied in tape and reel packaging.
Additional Information
Series: Gen2RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 454pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 24.5A |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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