LSIC2SD120C05
DIODE SIC 1.2KV 18.1A TO252LManufacturer: Littelfuse Inc.
Categories: Single Diodes
Quality Control: Learn More
Littelfuse Inc. LSIC2SD120C05 is a Gen2 series Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. This surface mount component, housed in a TO-252 (DPAK) package, features a maximum DC reverse voltage of 1200 V and an average rectified forward current capability of 18.1A. The forward voltage drop is specified at 1.8 V maximum at 5 A. Notable for its SiC Schottky technology, it exhibits no measurable reverse recovery time for currents greater than 500mA (Io). Capacitance at 1V and 1MHz is 310pF, with a reverse leakage of 100 µA at 1200 V. The operating junction temperature range is from -55°C to 175°C. This component is commonly utilized in industrial power supplies, electric vehicle charging, and solar inverters. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Gen2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 310pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 18.1A |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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