LSIC2SD120A10A
DIODE SIL CARB 1.2KV 28A TO220LManufacturer: Littelfuse Inc.
Categories: Single Diodes
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Littelfuse Inc. LSIC2SD120A10A is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This through-hole component, packaged in a TO-220-2L, offers a maximum DC reverse voltage of 1200V and an average rectified current handling capability of 28A. It exhibits a low forward voltage drop of 1.8V at 10A and a reverse leakage current of 100 µA at its maximum reverse voltage. With a junction operating temperature range of -55°C to 175°C and a capacitance of 582pF at 1V and 1MHz, this diode features a non-existent reverse recovery time for currents above 500mA, indicating superior switching performance. This component is suitable for use in demanding power electronics applications across industries such as industrial power supplies, automotive systems, and renewable energy infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 582pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 28A |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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