LSIC2SD065D16A
DIODE SIL CARBIDE 650V 38A TO263Manufacturer: Littelfuse Inc.
Categories: Single Diodes
Quality Control: Learn More
Littelfuse Inc. GEN2 Series SiC Schottky Diode, part number LSIC2SD065D16A. This 650V, 38A surface mount device in a TO-263 (D2PAK) package offers superior performance characteristics for demanding applications. Featuring a maximum forward voltage of 1.8V at 16A and an exceptionally low reverse leakage of 50 µA at 650V, this diode exhibits zero reverse recovery time, making it ideal for high-frequency switching power supplies and power factor correction circuits. Its 730pF capacitance at 1V, 1MHz (Vr, F) is a key parameter for optimizing circuit design. The AEC-Q101 qualification and automotive grade designation underscore its reliability in harsh environments. Operating junction temperature range is -55°C to 175°C. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Gen2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 730pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 38A |
| Supplier Device Package | TO-263 (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 16 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
LSIC2SD065D20A
DIODE SIL CARB 650V 20A TO220AC
LSIC2SD065E40CCA
DIODE SIL CARB 650V 45A TO247AD
LSIC2SD065D06A
DIODE SIL CARB 650V 18.5A TO263
