LSIC2SD065C10A
DIODE SIL CARB 650V 27A TO252Manufacturer: Littelfuse Inc.
Categories: Single Diodes
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Littelfuse Inc. Gen2 series Silicon Carbide (SiC) Schottky diode, part number LSIC2SD065C10A. This surface mount component features a 650 V reverse voltage rating and a maximum forward voltage of 1.8 V at 10 A. It offers a continuous average rectified forward current of 27 A and a reverse leakage of 50 µA at its maximum voltage. With a junction operating temperature range of -55°C to 175°C, this TO-252-3, DPAK package diode exhibits zero reverse recovery time for currents exceeding 500 mA. Its low capacitance of 470pF at 1V and 1MHz makes it suitable for applications in power conversion, electric vehicle charging, and industrial motor control. The LSIC2SD065C10A is supplied on tape and reel.
Additional Information
Series: Gen2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 470pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 27A |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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