LSIC2SD065C08A
DIODE SIL CARB 650V 23A TO252Manufacturer: Littelfuse Inc.
Categories: Single Diodes
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Littelfuse Inc. Gen2 series Silicon Carbide Schottky diode, part number LSIC2SD065C08A, offers a robust 650V reverse voltage capability and a continuous forward current rating of 23A. This surface mount device, packaged in a TO-252 (DPAK) case, features a low forward voltage drop of 1.8V at 8A and a minimal reverse leakage current of 50 µA at 650V. Its Silicon Carbide technology ensures exceptional performance with a reverse recovery time of effectively 0 ns, making it suitable for high-frequency switching applications. The operating junction temperature range is -55°C to 175°C. This component is commonly utilized in power factor correction (PFC) circuits, switch mode power supplies (SMPS), and electric vehicle (EV) charging systems.
Additional Information
Series: Gen2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 415pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 23A |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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