LSIC2SD065C06A
DIODE SIL CARB 650V 18.5A TO252Manufacturer: Littelfuse Inc.
Categories: Single Diodes
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Littelfuse Inc. Gen2 series SiC Schottky Diode, part number LSIC2SD065C06A, offers a 650V reverse voltage rating and 18.5A average rectified current (Io). This surface mount device, housed in a TO-252 (DPAK) package, features a low forward voltage (Vf) of 1.8V at 6A and a minimal reverse leakage current of 50 µA at 650V. With a junction operating temperature range of -55°C to 175°C and zero reverse recovery time, it is suitable for high-efficiency power conversion applications. Industries benefiting from this component include automotive, industrial power supplies, and renewable energy systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Gen2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 18.5A |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 6 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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