LSIC2SD065A08A
DIODE SIL CARB 650V 23A TO220-2LManufacturer: Littelfuse Inc.
Categories: Single Diodes
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Littelfuse Inc. Gen2 series SiC Schottky Diode, part number LSIC2SD065A08A, offers robust performance with a 650V reverse voltage and a 23A average rectified current (Io). This through-hole component, packaged in a TO-220-2L, features a maximum forward voltage (Vf) of 1.8V at 8A. Its silicon carbide technology ensures minimal reverse recovery time, rated at 0 ns for currents greater than 500mA, contributing to high efficiency in demanding applications. The diode exhibits a reverse leakage of 50 µA at 650V and a capacitance of 415pF at 1V and 1MHz. Operating temperature ranges from -55°C to 175°C, making it suitable for power supply, motor drive, and electric vehicle charging systems.
Additional Information
Series: Gen2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 415pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 23A |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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