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MG12150D-BA1MM

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MG12150D-BA1MM

IGBT MODULE 1200V 210A 1100W D3

Manufacturer: Littelfuse Inc.

Categories: IGBT Modules

Quality Control: Learn More

Littelfuse Inc. MG12150D-BA1MM is a Half Bridge IGBT Module designed for high-power applications. This module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 210 A. The on-state voltage at 150 A collector current and 15 V gate-emitter voltage is typically 1.8 V. With a maximum power dissipation of 1100 W and an input capacitance (Cies) of 11 nF at 25 V, it is suitable for demanding power conversion tasks. The module operates efficiently across a temperature range of -40°C to 150°C (TJ) and is chassis mountable in a D3 package. This component is commonly utilized in industrial automation, renewable energy systems, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 150A (Typ)
NTC ThermistorNo
Supplier Device PackageD3
IGBT Type-
Current - Collector (Ic) (Max)210 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max1100 W
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce11 nF @ 25 V

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