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SD215DE TO-72 4L

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SD215DE TO-72 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Manufacturer: Linear Integrated Systems, Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Linear Integrated Systems, Inc. SD215 series N-Channel Lateral DMOS transistor, part number SD215DE-TO-72-4L. This through-hole device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 50mA at 25°C. The SD215DE-TO-72-4L offers a maximum power dissipation of 300mW (Ta) and a typical Rds On of 45 Ohms at 1mA drain current and 10V gate-source voltage. Key parameters include a Vgs(th) of 1.5V at 1µA and a maximum gate-source voltage of ±30V. This component is utilized in various applications including high-speed switching and signal amplification within the aerospace and industrial automation sectors. The component is supplied in a TO-72-4 metal can package.

Additional Information

Series: SD215RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AF, TO-72-4 Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 125°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50mA (Ta)
Rds On (Max) @ Id, Vgs45Ohm @ 1mA, 10V
FET Feature-
Power Dissipation (Max)300mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1µA
Supplier Device PackageTO-72-4
Drive Voltage (Max Rds On, Min Rds On)5V, 25V
Vgs (Max)+30V, -25V
Drain to Source Voltage (Vdss)20 V

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