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SD213DE TO-72 4L

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SD213DE TO-72 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Manufacturer: Linear Integrated Systems, Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Linear Integrated Systems, Inc. SD213DE-TO-72-4L is a high-speed N-channel lateral DMOS transistor. This TO-72-4 packaged device features a Drain-to-Source Voltage (Vdss) of 10V and a continuous drain current (Id) of 50mA at 25°C ambient. The Rds On is specified at a maximum of 45 Ohms for 1mA drain current and 10V gate-source voltage. With a maximum power dissipation of 300mW at 25°C ambient, this MOSFET is suitable for applications requiring low power switching and signal amplification. The operational temperature range is -55°C to 125°C. This component is utilized in various industrial and defense applications.

Additional Information

Series: SD213RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AF, TO-72-4 Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 125°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50mA (Ta)
Rds On (Max) @ Id, Vgs45Ohm @ 1mA, 10V
FET Feature-
Power Dissipation (Max)300mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1µA
Supplier Device PackageTO-72-4
Drive Voltage (Max Rds On, Min Rds On)5V, 25V
Vgs (Max)+25V, -15V
Drain to Source Voltage (Vdss)10 V

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