LS841 SOIC 8L
JFET 2N-CH 60V 8SOICManufacturer: Linear Integrated Systems, Inc.
Categories: JFETs
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Linear Integrated Systems, Inc. LS841 series dual N-channel JFET, part number LS841-SOIC-8L, is supplied in an 8-SOIC surface mount package, presented on tape and reel. This component features a 60V breakdown voltage (V(BR)GSS) and a 1V gate-source cutoff voltage (VGS off) at a drain current of 1nA. The LS841-SOIC-8L exhibits a maximum drain current (Idss) of 500 µA at 20V drain-source voltage with zero gate-source voltage. With a maximum power dissipation of 400 mW, it operates across a temperature range of -55°C to 150°C. The input capacitance (Ciss) is specified at a maximum of 10pF at 20V drain-source voltage. This device is suitable for applications in test and measurement equipment, audio preamplifiers, and low-noise signal amplification.
Additional Information
Series: LS841RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 20V |
| Voltage - Breakdown (V(BR)GSS) | 60 V |
| Supplier Device Package | 8-SOIC |
| Power - Max | 400 mW |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 500 µA @ 20 V |
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