TH58NYG3S0HBAI6
IC FLASH 8GBIT PARALLEL 67VFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
Quality Control: Learn More
Kioxia America, Inc. TH58NYG3S0HBAI6 is an 8Gbit parallel NAND Flash memory component organized as 1G x 8. This non-volatile memory features a 25 ns access time and a 25 ns page write cycle time. The device utilizes SLC (Single-Level Cell) technology for enhanced endurance and performance. Operating within a supply voltage range of 1.7V to 1.95V, it is specified for an operating temperature range of -40°C to 85°C. The component is housed in a 67-VFBGA (6.5x8) package and is suitable for surface mount applications. This memory solution finds application in industrial control systems, networking equipment, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 1G x 8 |
| Programmable | Not Verified |
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