TH58NYG2S3HBAI6
IC FLASH 4GBIT PARALLEL 63BGAManufacturer: Kioxia America, Inc.
Categories: Memory
Quality Control: Learn More
Kioxia America, Inc. TH58NYG2S3HBAI6 is a 4Gbit NAND Flash memory component featuring a parallel interface. This non-volatile memory utilizes Single-Level Cell (SLC) technology for enhanced endurance and performance. The memory organization is 512M x 8, providing efficient data handling. Designed for robust operation, it operates within a temperature range of -40°C to 85°C. The component is housed in a compact 63-BGA (9x11) package, suitable for surface mount applications. Key electrical specifications include a supply voltage of 1.7V to 1.95V and a word/page write cycle time of 25ns. This device is well-suited for applications requiring high reliability and data integrity, including industrial control systems, automotive electronics, and networking equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-BGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
THGBMHG9C8LBAU8
IC FLASH 512GBIT EMMC 153WFBGA
TC58NVG1S3HTA00
IC FLASH 2GBIT PARALLEL 48TSOP I
TC58NVG2S0HBAI6
IC FLASH 4GBIT PARALLEL 67VFBGA
