TH58NYG2S3HBAI4
IC FLASH 4GBIT PARALLEL 63BGAManufacturer: Kioxia America, Inc.
Categories: Memory
Quality Control: Learn More
Kioxia's TH58NYG2S3HBAI4 is a 4Gbit NAND Flash memory component with a parallel interface, organized as 512M x 8. This non-volatile memory device utilizes SLC (Single-Level Cell) technology for enhanced endurance and performance. It is housed in a compact 63-BGA (9x11) package, suitable for surface mount applications. The TH58NYG2S3HBAI4 operates within a voltage range of 1.7V to 1.95V and supports an operating temperature range of -40°C to 85°C. Key performance specifications include a write cycle time of 25ns for word/page operations. This component is commonly found in applications requiring reliable and high-performance data storage, such as industrial systems, networking equipment, and solid-state drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-BGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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