TH58NVG3S0HBAI6
IC FLASH 8GBIT PARALLEL 67VFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
Quality Control: Learn More
Kioxia America, Inc. TH58NVG3S0HBAI6 is an 8Gbit NAND Flash memory component with a parallel interface. This non-volatile memory utilizes Single-Level Cell (SLC) technology, offering a robust solution for data storage. The device features a fast 25 ns access time and a page write cycle time of 25 ns. It is housed in a compact 67-VFBGA package with dimensions of 6.5x8 mm. Operating within a voltage range of 2.7V to 3.6V, the TH58NVG3S0HBAI6 is designed for reliable operation across an industrial temperature range of -40°C to 85°C. Its capabilities make it suitable for demanding applications in the automotive, industrial, and telecommunications sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 1G x 8 |
| Programmable | Not Verified |
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