TH58NVG2S3HBAI6
IC FLASH 4GBIT PARALLEL 63BGAManufacturer: Kioxia America, Inc.
Categories: Memory
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Kioxia America, Inc. TH58NVG2S3HBAI6 is a 4Gbit SLC NAND Flash memory component. This non-volatile memory features a parallel interface and is organized as 512M x 8. The device operates within a voltage range of 2.7V to 3.6V and offers a write cycle time of 25ns for word/page operations. Designed for surface mounting, it comes in a 63-BGA (9x11) package. The operating temperature range is specified as -40°C to 85°C (TA). This component is suitable for applications in consumer electronics, industrial automation, and data storage systems requiring reliable, high-density flash memory.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-BGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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