TH58NVG2S3HBAI4
IC FLASH 4GBIT PARALLEL 63BGAManufacturer: Kioxia America, Inc.
Categories: Memory
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Kioxia America, Inc. TH58NVG2S3HBAI4 is a 4Gbit NAND Flash memory device with a parallel interface. This non-volatile memory component is organized as 512M x 8 and utilizes SLC (Single-Level Cell) technology for enhanced endurance and performance. The device operates within a supply voltage range of 2.7V to 3.6V and features a write cycle time of 25ns for word/page operations. Packaged in a 63-BGA (9x11) configuration, it is designed for surface mount applications. The operating temperature range is -40°C to 85°C (TA). This memory solution is suitable for applications in industrial, automotive, and data storage sectors requiring reliable and robust non-volatile storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-BGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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